SSD30N03-40D n-ch enhancement mode power mosfet 34a, 30v, r ds(on) 26m ? elektronische bauelemente 12-sep-2012 rev.a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c d n o p g e f h k j m b to - 252(d - pack) rohs compliant product a suffix of -c specifies halogen free description these miniature surface mount mosfets utilize a hig h cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features low r ds(on) provides higher efficiency and extends battery life . low thermal impedance copper leadframe dpak saves b oard space. fast switching speed. high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as compu ters, printers, pcmcia cards, cellular and cordless telep hones. package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current 1 t c =25 c i d 34 a pulsed drain current 2 i dm 72 a continuous source current (diode conduction) 1 i s 30 a total power dissipation 1 t c =25 c p d 50 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance rating maximum thermal resistance junction-ambient 1 r ja 50 c / w maximum thermal resistance junction-case r jc 3 c / w notes 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction temperat ure. ref. millimeter ref. millimeter min. max. min. max. a 6. 4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1. 6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0. 8 1.20 1 gate 3 source 2 drain
SSD30N03-40D n-ch enhancement mode power mosfet 34a, 30v, r ds(on) 26m ? elektronische bauelemente 12-sep-2012 rev.a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) 1 - - v v ds =v gs, i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs =20v zero gate voltage drain current i dss - - 1 a v ds =24v, v gs =0 - - 25 v ds =24v, v gs =0, t j =55c on-state drain current 1 i d(on) 34 - - a v ds =5v, v gs =10v drain-source on-resistance 1 r ds(on) - - 26 m v gs =10v, i d =17a - - 35 v gs =4.5v, i d =11a forward transconductance 1 g fs - 22 - s v ds =15v, i d =17a diode forward voltage v sd - 1.1 - v i s =34a, v gs =0 dynamic 2 total gate charge q g - 4 - nc v ds =15v v gs =4.5v i d =11a gate-source charge q gs - 1.1 - gate-drain charge q gd - 1.4 - input capacitance c iss - 720 - pf v ds =15v v gs =0 f=1mhz output capacitance c oss - 165 - reverse transfer capacitance c rss - 60 - turn-on delay time t d(on) - 16 - ns v dd =25v i d =34a v gen =10v r l =25 rise time t r - 5 - turn-off delay time t d(off) - 23 - fall time t f - 3 - notes 1. pulse test pulse width Q 300 s, duty cycle Q 2 . 2. guaranteed by design, not subject to production testing.
SSD30N03-40D n-ch enhancement mode power mosfet 34a, 30v, r ds(on) 26m ? elektronische bauelemente 12-sep-2012 rev.a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
SSD30N03-40D n-ch enhancement mode power mosfet 34a, 30v, r ds(on) 26m ? elektronische bauelemente 12-sep-2012 rev.a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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